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AGR09045E - Lateral MOSFET

Datasheet Summary

Features

  • Typical performance ratings are for IS-95 CDMA, pilot, sync, paging, traffic codes 8.
  • 13:.
  • Output power (POUT): 10 W.
  • Power gain: 20 dB.
  • Efficiency: 28%.
  • Adjacent channel power ratio (ACPR) for 30 kHz bandwidth (BW): (750 kHz offset:.
  • 45 dBc) (1.98 MHz offset:.
  • 60 dBc).
  • Input return loss: 10 dB. High-reliability, gold-metalization process. High gain, efficiency, and linearity. Integrated ESD protection. Si LDMOS. Industry-st.

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Datasheet Details

Part number AGR09045E
Manufacturer PEAK electronics
File Size 349.59 KB
Description Lateral MOSFET
Datasheet download datasheet AGR09045E Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance. Packaged in an industry-standard CuW package capable of delivering a minimum output power of 45 W, it is ideally suited for today's RF power amplifier applications.
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