P6LU-1212E - (P6LU-xxxxE) 4KV ISOLATED 1W UNREGULATED DUAL OUTPUT SIP7

PEAK electronics

Download the P6LU-1212E datasheet PDF. This datasheet also covers the P6LU-0505E variant, as both devices belong to the same (p6lu-xxxxe) 4kv isolated 1w unregulated dual output sip7 family and are provided as variant models within a single manufacturer datasheet.

Key Features

n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Ceramic Eyelets Ideally Suited For Space Level.

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P6LU-1212E (p6lu-xxxxe) 4kv isolated 1w unregulated dual output sip7 by PEAK electronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (P6LU-0505E_PEAKelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	P6LU-1212E
Manufacturer	PEAK electronics
File Size	255.79 KB
Description	(P6LU-xxxxE) 4KV ISOLATED 1W UNREGULATED DUAL OUTPUT SIP7
Datasheet	P6LU-1212E Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer

Other Datasheets by PEAK electronics

Part Number	Description
P6LU-0505E	(P6LU-xxxxE) 4KV ISOLATED 1W UNREGULATED DUAL OUTPUT SIP7
P6LU-0512E	(P6LU-xxxxE) 4KV ISOLATED 1W UNREGULATED DUAL OUTPUT SIP7
P6LU-0518E	(P6LU-xxxxE) 4KV ISOLATED 1W UNREGULATED DUAL OUTPUT SIP7
P6LU-2405E	(P6LU-xxxxE) 4KV ISOLATED 1W UNREGULATED DUAL OUTPUT SIP7
P6LU-2412E	(P6LU-xxxxE) 4KV ISOLATED 1W UNREGULATED DUAL OUTPUT SIP7

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD-91292D POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number IRFY440C IRFY440CM IRFY440C, IRFY440CM 500V, N-CHANNEL HEXFET MOSFET TECHNOLOGY ® R DS(on) 0.85 Ω 0.85 Ω ID 7.0A 7.0A Eyelets Ceramic Ceramic HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.