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Silicon NPN transistor epitaxial type C5906
C5906
[ Applications ] High voltage, High current
[ Feature ] High voltage VCEO= 170V High current gain charactristic Low collector-emitter saturation voltage VCE(sat)= 0.45V(Max.) at IC/IB= 2A/200mA Fast-switching speed
[ Absolute maximum ratings (Ta=25C) ]
Characteristic
Symbol Maximum ratings
Collector-base voltage
VCBO
200
Collector-emitter voltage
VCEO
170
Emitter-base voltage
VEBO
6
Collector current
IC 5
Junction temperature
Tj 150
Storage temperature
Tstg -55 to 150
Unit V V V A C C
[ Electrical characteristics (Ta=25C) ]
Characteristic
Symbol Min. Typ. Max.
C5906 Datasheet
