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D5929 - Silicon NPN transistor

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Part number D5929
Manufacturer PHENITEC SEMICONDUCTOR
File Size 61.47 KB
Description Silicon NPN transistor
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    D5929 Silicon NPN transistor epitaxial type D5929 [ Applications ] Inverter, Strobo flash, DC-DC converter with small collector-emitter saturation voltage. Power switching with high collector current. [ Feature ] High collector-emitter breakdown voltage BVCEO= 30V High emitter-base breakdown voltage BVEBO= 9V Small collector-emitter saturation voltage VCE(sat)= 0.35V(Typ.) at IC= 1.5A, IB= 50mA [ Absolute maximum ratings (Ta=25C) ] Characteristic Symbol Maximum ratings Collector-base voltage VCBO 50 Collector-emitter voltage VCEO 30 Emitter-base voltage VEBO 9 Collector current IC 3 Junction temperature Tj 150 Storage temperature Tstg -55 to 150 Unit V V V A C C [ Electrical characteristics (Ta=25C) ] Characteristic Symbol Min. Typ. Max.
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