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D5850 - Silicon NPN transistor

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Part number D5850
Manufacturer PHENITEC
File Size 117.78 KB
Description Silicon NPN transistor
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    Go to Home Page D5850 Silicon NPN transistor epitaxial type D5850 [ Applications ] General purpose transistors Medium power amplifire and switching [ Feature ] High collector-emitter beak-down voltage BVCEO= 80V High emitter-base break-down voltage BVEBO= 8V Low collector saturation voltage VCE(sat)= 0.14V (Typ.) at IC= 500mA, IB= 50mA Complimentary pair with phenitec P/N B5850 [ Absolute maximum ratings (Ta=25C) ] Characteristic Symbol Maximum ratings Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 8 V Collector current IC 700 mA Junction temperature Tj 150 C Storage temperature Tstg -55 to 150 C [ Electrical characteristics (Ta=25C) ] Characteristic Symbol Min. Typ. Max.
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