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D5850
Silicon NPN transistor epitaxial type D5850
[ Applications ] General purpose transistors Medium power amplifire and switching
[ Feature ] High collector-emitter beak-down voltage BVCEO= 80V High emitter-base break-down voltage BVEBO= 8V Low collector saturation voltage VCE(sat)= 0.14V (Typ.) at IC= 500mA, IB= 50mA Complimentary pair with phenitec P/N B5850
[ Absolute maximum ratings (Ta=25C) ]
Characteristic
Symbol Maximum ratings Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
8
V
Collector current
IC
700
mA
Junction temperature
Tj
150
C
Storage temperature
Tstg
-55 to 150
C
[ Electrical characteristics (Ta=25C) ]
Characteristic
Symbol Min.
Typ.
Max.
D5850 Datasheet
