PINGWEI 40P03GL
P-CHANNEL MOSFET
| Part No. | 40P03GL |
|---|---|
| Datasheet | 40P03GL Download |
| Manufacturer | PINGWEI |
| Description | P-CHANNEL MOSFET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGS ID IDM EAS TJ,TSTG TL 40P03(G,D)L -30 ±20 -40 -120 151 -55to+150 260 UNIT V A mJ ℃ ℃ Thermal Characteristics Parameter Thermal resistance , Junction to Case Maximum Power Dissipation TC=25℃ Symbol Rth(J-c) PD 40P03(G,D)L 2.8 45 Units ℃/W W Version1.0-2015.2ELECTRICAL CHARACTERISTICS
(Tc=25℃,unless otherwise noted) Parameter Symbol Test Conditions Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V,ID=-250uA Zero Gate Voltage Drain Current IDSS VDS=-30V,VGS=0V Gate-Body Leakage Current,Forward IGSSF VGS=20V,VDS=0V Gate-Body Leakage Current,Reverse IGSSR VGS=-20V,VDS=0V On Characteristics Gate-Source Threshold Voltage VGS(th) VDS=VGS,ID=-25...
