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PSA10N70 - 700V N-ch Planar MOSFET

Key Features

  • RoHS Compliant.
  • RDS(ON),typ. =0.80 Ω@VGS=10V.
  • Low Gate Charge Minimize Switching Loss.
  • Fast Recovery Body Diode PSP10N70 PSA10N70 BVDSS 700V RDS(ON),typ. 0.80Ω ID 10A.

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Datasheet Details

Part number PSA10N70
Manufacturer PIP
File Size 689.81 KB
Description 700V N-ch Planar MOSFET
Datasheet download datasheet PSA10N70 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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700V N-ch Planar MOSFET General Features  RoHS Compliant  RDS(ON),typ.=0.80 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body Diode PSP10N70 PSA10N70 BVDSS 700V RDS(ON),typ. 0.80Ω ID 10A Applications  Adaptor  Charger  SMPS Standby Power Ordering Information Part Number Package PSP10N70 TO-220 PSA10N70 TO-220F Brand G DS GDS TO-220 TO-220F Package No to Scale Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGSS Parameter Drain-to-Source Voltage Gate-to-Source Voltage PSP10N70 PSA10N70 Unit 700 V ±30 ID Continuous Drain Current IDM Pulsed Drain Current at VGS=10V 10 A 40 EAS Single Pulse Avalanche Energy 500 mJ dv/dt Peak Diode Recovery dv/dt 5.