PIP PSP10N70
700V N-ch Planar MOSFET
GENERAL FEATURES
● RoHS Compliant● RDS(ON),typ.=0.80 Ω@VGS=10V
● Low Gate Charge Minimize Switching Loss
● Fast Recovery Body Diode PSP10N70 PSA10N70 BVDSS 700V RDS(ON),typ. 0.80Ω ID 10A
APPLICATIONS
● Adaptor● Charger
● SMPS Standby Power Ordering Information Part Number Package PSP10N70 TO-220 PSA10N70 TO-220F Brand G DS GDS TO-220 TO-220F Package No to Scale
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol VDSS VGSS Parameter Drain-to-Source Voltage Gate-to-Source Voltage PSP10N70 PSA10N70 Unit 700 V ±30 ID Continuous Drain Current IDM Pulsed Drain Current at VGS=10V 10 A 40 EAS Single Pulse Avalanche Energy 500 mJ dv/dt Peak Diode Recovery dv/dt 5.5 V/ns Power Dissipation PD Derating Factor above 25℃ 218 51 1.75 0.4 W W/℃ TL Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 150 Caution: Stresses greater than those listed in the “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device.