PTP02N03N - 30V N-Channel MOSFET

Features

Proprietary New Trench Technology.
RDS(ON),typ. =2.6 mΩ@VGS=10V.
Low Gate Charge Minimize Switching Loss.
Fast Recovery Body Diode BVDSS 30V RDS(ON),typ. 2.6mΩ ID 120A.

PIP

PTP02N03N 30V N-Channel MOSFET by PIP - Datasheet Preview — Datasheet preview – PTP02N03N

Datasheet Details

Part number	PTP02N03N
Manufacturer	PIP
File Size	506.78 KB
Description	30V N-Channel MOSFET
Datasheet	PTP02N03N Datasheet
Additional preview pages of the PTP02N03N datasheet.

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Full PDF Text Transcription

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PTP02N03N 30V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=2.6 mΩ@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body Diode BVDSS 30V RDS(ON),typ. 2.

Published: Feb 1, 2025 |