PTP02N03N Overview
PTP02N03N 30V N-Channel MOSFET General.
PTP02N03N Key Features
- Proprietary New Trench Technology
- RDS(ON),typ.=2.6 mΩ@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
Datasheet Details
| Part number | PTP02N03N |
|---|---|
| Datasheet | PTP02N03N-PIP.pdf |
| File Size | 506.78 KB |
| Manufacturer | PIP |
| Description | 30V N-Channel MOSFET |
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