PTP02N03N
Overview
- Proprietary New Trench Technology
- RDS(ON),typ.=2.6 mΩ@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
- Part: PTP02N03N
- Description: 30V N-Channel MOSFET
- Category: MOSFET
- Manufacturer: PIP
- Size: 506.78 KB