Datasheet Summary
30V N-Channel MOSFET
General Features
- Proprietary New Trench Technology
- RDS(ON),typ.=2.6 mΩ@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
BVDSS 30V
RDS(ON),typ. 2.6mΩ
ID 120A
Applications
- High efficiency DC/DC Converters
- Motor Bridge Switch
- Oring FET/Load Switching
G DS
Ordering Information
Part Number
Package
TO-220
Brand
TO-220 Package Not to...