PIP PTP07N80
800V N-Channel MOSFET
GENERAL FEATURES
Proprietary New Planar Technology RDS(ON),typ.=1.5 Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode PTP07N80 PTA07N80 BVDSS 800V RDS(ON),typ. 1.5Ω ID 7.0AAPPLICATIONS
Adaptor LCD Panel Power OtherAPPLICATIONS
Ordering Information Part Number Package PTP07N80 TO-220 PTA07N80 TO-220F Brand G DS G D S TO-220 TO-220F Package Not to ScaleABSOLUTE MAXIMUM RATINGS
℃ TC=25 unless otherwise specified Symbol VDSS VGSS ID ℃ ID @ Tc =100 IDM EAS dv/dt PD TL TPAK Parameter Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current ℃ Continuous Drain Current @ Tc=100 Pulsed Drain Current at VGS=10V[2] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation ℃ Derating Factor above 25 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds PTP07N80 PTA07N80 800 ±30 7.0 Figure 3 Figure 6 580 5.0 150 40 1.2 0.32 300 260 Unit V A mJ V/ns W ℃ W/ ℃ TJ& TSTG Operating a...