PIP PTP08N06N1
60V N-Channel MOSFET
APPLICATIONS
: ˗ Power Supply ˗● AdDaCpt-oDr C Converters● Charger
● SMPS Standby Power ˗F●●eRLaootLwuHerSaOedNCsF:oRrmeepesliisatnatnce ˗● LoLwoGwaRteDCS(OhNa) rtgoeMinimize Conductive Loss ˗● PeLaokwCuGrraetnetCvshaPruglseefoWridFtahsCt uSrwveitching Application ˗● ESODptimimpirzoevdedBCVaDSpSaCbialiptyability PTP08N06N1 Pb Lead Free Package and Finish VDSS VD6S0SV 650V RDS(ON)(MAX) RDS(O1N.1)8:(mTyȟp.) IDa 1I1D0A 7.0 A Ordering Information Part Number 373 1 1 Package TO-220 Brand
ABSOLUTE MAXIMUM RATINGS
TC=25ɗ unless otherwise specified Symbol VDSS IDa IDM PD VGS Parameter Drain-to-Source Voltage Continuous Drain Current Pulsed Drain Current @VG=10V Power Dissipation Derating Factor above 25ɗ Gate-to-Source Voltage Value 60 110 439 156 1.04 +/-20 EAS Single Pulse Avalanche Energy (L=1mH) IAS Pulsed Avalanche Energy TJ and TSTG Operating Junction and Storage Temperature Range 00 Figure 9 -55 to 175 Unit V A W W/ɗ V mJ A ɗ Thermal Resistance Symbol Parameter RșJC Junction-to-Case Min...