PIP PTP08N08NA
85V N-Channel MOSFET
GENERAL FEATURES
Proprietary New Trench Technology RDS(ON),typ.=6.9 mΩ@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode PTP08N08NA Pb Lead Free Package BVDSS 85V RDS(ON),typ. 6.9mΩ ID[2] 105AAPPLICATIONS
High efficiency DC/DC Converters Synchronous Rectification UPS Inverter Ordering Information Part Number Package PTP08N08NA TO-220 Brand G DS TO-220 Package No to ScaleABSOLUTE MAXIMUM RATINGS
℃ TC=25 unless otherwise specified Symbol VDSS VGSS ID ℃ ID @ Tc =100 IDM EAS dv/dt PD TL TPAK Parameter Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current[2] ℃ Continuous Drain Current @ Tc=100 [2] Pulsed Drain Current at VGS=10V[2,4] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation ℃ Derating Factor above 25 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds PTP08N08NA 85 ±20 105 77 420 800 5.0 189 1.3 300 260 Unit V A mJ V/ns W ℃ W/ ℃ TJ& TSTG Operating an...