PTP10N80 - 800V N-Channel MOSFET

Features

Proprietary New Planar Technology.
RDS(ON),typ. =1.0 Ω@VGS=10V.
Low Gate Charge Minimize Switching Loss.
Fast Recovery Body Diode BVDSS 800V PTP10N80 PTA10N80 RDS(ON),typ. 1.0Ω ID 10A.

PIP

PTP10N80 800V N-Channel MOSFET by PIP - Datasheet Preview — Datasheet preview – PTP10N80

Datasheet Details

Part number	PTP10N80
Manufacturer	PIP
File Size	873.97 KB
Description	800V N-Channel MOSFET
Datasheet	PTP10N80 Datasheet
Additional preview pages of the PTP10N80 datasheet.

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Full PDF Text Transcription

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800V N-Channel MOSFET General Features  Proprietary New Planar Technology  RDS(ON),typ.=1.0 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body Diode BVDSS 800V PTP10N80 PTA10N80 RDS(ON),typ. 1.

Published: Aug 29, 2025 |