PIP PTP10N80
800V N-Channel MOSFET
| Part No. | PTP10N80 |
|---|---|
| Datasheet | PTP10N80 Download |
| Manufacturer |  PIP |
| Description | 800V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
● Proprietary New Planar Technology● RDS(ON),typ.=1.0 Ω@VGS=10V
● Low Gate Charge Minimize Switching Loss
● Fast Recovery Body Diode BVDSS 800V PTP10N80 PTA10N80 RDS(ON),typ. 1.0Ω ID 10A
APPLICATIONS
● ATX Power● LCD Panel Power Ordering Information Part Number Package PTP10N80 TO-220 PTA10N80 TO-220F Brand GDS GDS TO-220 TO-220F Package Not to Scale
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol VDSS VGSS ID ID @ Tc =100℃ IDM EAS dv/dt PD TL TPAK Parameter Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current Continuous Drain Current @ Tc=100℃ Pulsed Drain Current at VGS=10V[2] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation Derating Factor above 25℃ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds PTP10N80 PTA10N80 800 ±30 10 Figure 3 Figure 6 460 5.0 160 55 1.28 0.44 300 260 Unit V A mJ V/ns W W/℃ ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 150 Caution: Stresses greater than those listed in the “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device.
