PIP PTP20N40
400V N-Channel MOSFET
GENERAL FEATURES
● Proprietary New Planar Technology● RDS(ON),typ.=0.17 Ω@VGS=10V
● Low Gate Charge Minimize Switching Loss
● Fast Recovery Body Diode PTP20N40 PTA20N40 BVDSS 400V RDS(ON),typ. 0.17Ω ID 20A
APPLICATIONS
● Adaptor Charger● SMPS Power Supply
● LCD Panel Power Ordering Information Part Number Package PTP20N40 TO-220 PTA20N40 TO-220F Brand G DS G DS TO-220 TO-220F Package No to Scale
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter PTP20N40 PTA20N40 Unit VDSS VGSS ID ID @ Tc =100℃ IDM EAS dv/dt PD TL TPAK Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current Continuous Drain Current @ Tc=100℃ Pulsed Drain Current at VGS=10V[2] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation Derating Factor above 25℃ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds 400 ±30 20 Figure 3 Figure 6 1600 5.0 250 60 2.0 0.48 300 260 V A mJ V/ns W W/℃ ℃ TJ& T...