PIP PTP20N50A
500V N-Channel MOSFET
GENERAL FEATURES
Proprietary New Planar Technology RDS(ON),typ.=0.24 Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode PTP20N50A PTA20N50A BVDSS 500V RDS(ON),typ. 0.24Ω ID 20AAPPLICATIONS
Adaptor Charger SMPS Power Supply LCD Panel Power Ordering Information Part Number Package PTP20N50A TO-220 PTA20N50A TO-220F Brand GDS GDS TO-220 TO-220F Package Not to ScaleABSOLUTE MAXIMUM RATINGS
℃ TC=25 unless otherwise specified Symbol VDSS VGSS ID ℃ ID @ Tc =100 IDM EAS dv/dt PD TL TPAK Parameter Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current ℃ Continuous Drain Current @ Tc=100 Pulsed Drain Current at VGS=10V[2] Single Pulse Avalanche Energy Peak Diode Recovery dv/dt[3] Power Dissipation ℃ Derating Factor above 25 Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds PTP20N50A PTA20N50A 500 ±30 20 Figure 3 Figure 6 1500 5.0 175 60 1.40 0.48 300 260 Unit V A mJ V/ns W ℃ W/ ℃ TJ& TSTG...