PIP SPTD04R014E
40V N-Channel MOSFET
| Part No. | SPTD04R014E |
|---|---|
| Datasheet | SPTD04R014E Download |
| Manufacturer |  PIP |
| Description | 40V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
➢ Proprietary New Trench Technology ➢ RDS(ON),typ.=1.7mΩ@VGS=10V ➢ Fast switching capability ➢ Very low on-resistance RDS(on) BVDSS 40V RDS(ON),typ. 1.7mΩ ID 205AAPPLICATIONS
➢ Synchronous Rectification ➢ Power management ➢ DC-DC Converters Ordering Information Part Number Package SPTD04R014E TO-252 Brand G D S TO-252 Package No to ScaleABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter SPTD04R014E Unit VDSS VGSS ID Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current TC=25℃ Continuous Drain Current TA=100℃ 40 V ±20 205 128 A IDM Pulsed Drain Current at VGS=10V 600 EAS Single Pulse Avalanche Energy L=1mH 800 mJ PD Power Dissipation TC=25℃ 156 W TL TPAK Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds 300 260 ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 150 Caution: Stresses greater than those listed in the “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device.
