SPTD04R014E Overview
Key Features
- Proprietary New Trench Technology
- RDS(ON),typ.=1.7mΩ@VGS=10V
- Fast switching capability
- Very low on-resistance RDS(on) BVDSS 40V RDS(ON),typ. 1.7mΩ ID 205A
| Part | SPTD04R014E |
|---|---|
| Description | 40V N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | PIP |
| Size | 823.82 KB |
Similar Parts
| Part Number | Manufacturer | Description |
|---|---|---|
| A2SHB | HAOHAI | N-Channel MOSFET |
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |