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SPTD04R014E - 40V N-Channel MOSFET

Key Features

  • Proprietary New Trench Technology.
  • RDS(ON),typ. =1.7mΩ@VGS=10V.
  • Fast switching capability.
  • Very low on-resistance RDS(on) BVDSS 40V RDS(ON),typ. 1.7mΩ ID 205A.

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Datasheet Details

Part number SPTD04R014E
Manufacturer PIP
File Size 823.82 KB
Description 40V N-Channel MOSFET
Datasheet download datasheet SPTD04R014E Datasheet

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SPTD04R014E 40V N-Channel MOSFET General Features ➢ Proprietary New Trench Technology ➢ RDS(ON),typ.=1.7mΩ@VGS=10V ➢ Fast switching capability ➢ Very low on-resistance RDS(on) BVDSS 40V RDS(ON),typ. 1.