SPTF60R70FD - 600V N-ch Multi-Epi Super-Junction MOSFET

PIP

Key Features

Proprietary New Super-Junction Technology.
RDS(ON),typ. =65 mΩ@VGS=10V.
Low Gate Charge Minimize Switching Loss.
Fast Recovery Body Diode.

SPTF60R70FD 600v n-ch multi-epi super-junction mosfet by PIP - Datasheet Preview

Datasheet Details

Part number	SPTF60R70FD
Manufacturer	PIP
File Size	727.73 KB
Description	600V N-ch Multi-Epi Super-Junction MOSFET
Datasheet	SPTF60R70FD Datasheet

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600V N-ch Multi-Epi Super-Junction MOSFET General Features ➢ Proprietary New Super-Junction Technology ➢ RDS(ON),typ.=65 mΩ@VGS=10V ➢ Low Gate Charge Minimize Switching Loss ➢ Fast Recovery Body Diode Applications ➢ Adaptor ➢ Charger ➢ SMPS Standby Power ➢ Switching Voltage Regulators Ordering Information Part Number Package SPTF60R70FD TO-247 Brand SPTF60R70FD BVDSS 600V RDS(ON),typ. 0.