SPTF60R70FD - 600V N-ch Multi-Epi Super-Junction MOSFET

Features

Proprietary New Super-Junction Technology.
RDS(ON),typ. =65 mΩ@VGS=10V.
Low Gate Charge Minimize Switching Loss.
Fast Recovery Body Diode.

PIP

SPTF60R70FD 600V N-ch Multi-Epi Super-Junction MOSFET by PIP - Datasheet Preview — Datasheet preview – SPTF60R70FD

Datasheet Details

Part number	SPTF60R70FD
Manufacturer	PIP
File Size	727.73 KB
Description	600V N-ch Multi-Epi Super-Junction MOSFET
Datasheet	SPTF60R70FD Datasheet
Additional preview pages of the SPTF60R70FD datasheet.

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Full PDF Text Transcription

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600V N-ch Multi-Epi Super-Junction MOSFET General Features ➢ Proprietary New Super-Junction Technology ➢ RDS(ON),typ.=65 mΩ@VGS=10V ➢ Low Gate Charge Minimize Switching Loss ➢ Fast Recovery Body Diode Applications ➢ Adaptor ➢ Charger ➢ SMPS Standby Power ➢ Switching Voltage Regulators Ordering Information Part Number Package SPTF60R70FD TO-247 Brand SPTF60R70FD BVDSS 600V RDS(ON),typ. 0.

Published: Nov 5, 2025 |