PIP SPTF60R70FD
600V N-ch Multi-Epi Super-Junction MOSFET
| Part No. | SPTF60R70FD |
|---|---|
| Datasheet | SPTF60R70FD Download |
| Manufacturer |  PIP |
| Description | 600V N-ch Multi-Epi Super-Junction MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
➢ Proprietary New Super-Junction Technology ➢ RDS(ON),typ.=65 mΩ@VGS=10V ➢ Low Gate Charge Minimize Switching Loss ➢ Fast Recovery Body DiodeAPPLICATIONS
➢ Adaptor ➢ Charger ➢ SMPS Standby Power ➢ Switching Voltage Regulators Ordering Information Part Number Package SPTF60R70FD TO-247 Brand SPTF60R70FD BVDSS 600V RDS(ON),typ. 0.065Ω ID 47A G D S TO-247 Package Not to ScaleABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter Value SPTF60R70FD Unit VDSS VGSS Drain-to-Source Voltage Gate source voltage (static) 600 V ±30 Continuous Drain Current @ TC = 25ºC 47 ID Continuous Drain Current @ TC = 100ºC 30 A IDM Pulsed Drain Current at VGS=10V 141 EAS Single Pulse Avalanche Energy 1536 mJ PD Power Dissipation 390 W TJ& TSTG Operating and Storage Temperature Range -55 to 150 ℃ Caution: Stresses greater than those listed in the “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device. Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Max.
