SPTP10R027HA - 100V N-Channel MOSFET

Features

Proprietary New Trench Technology.
RDS(ON),typ. =2.3mΩ@VGS=10V.
Low Gate Charge Minimize Switching Loss.
Fast Recovery Body Diode BVDSS 100V RDS(ON),typ. 2.3mΩ ID 235A.

PIP

SPTP10R027HA 100V N-Channel MOSFET by PIP - Datasheet Preview — Datasheet preview – SPTP10R027HA

Datasheet Details

Part number	SPTP10R027HA
Manufacturer	PIP
File Size	1.20 MB
Description	100V N-Channel MOSFET
Datasheet	SPTP10R027HA Datasheet
Additional preview pages of the SPTP10R027HA datasheet.

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Full PDF Text Transcription

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SPTP10R027HA 100V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=2.3mΩ@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body Diode BVDSS 100V RDS(ON),typ. 2.

Published: Jul 20, 2025 |