• Part: SPTP10R027HA
  • Description: 100V N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: PIP
  • Size: 1.20 MB
Download SPTP10R027HA Datasheet PDF
PIP
SPTP10R027HA
Features - Proprietary New Trench Technology - RDS(ON),typ.=2.3mΩ@VGS=10V - Low Gate Charge Minimize Switching Loss - Fast Recovery Body Diode BVDSS 100V RDS(ON),typ. 2.3mΩ ID 235A Applications - Synchronous Rectification - DC/DC Converter - Hard Switching and High Speed Circuit Ordering Information Part Number Package SPTP10R027HA TO-220 Brand TO-220 Package No to Scale Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Unit VDSS VGSS IDM EAS TL TPAK Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current Continuous Drain Current @ Tc=100℃ Pulsed Drain Current at VGS=10V[2] Single Pulse Avalanche Energy L=1m H Power Dissipation Derating Factor above 25℃ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds 100 ±20 235 180 720 1300 278 2.22 300 260 A m J W W/℃ ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 150 Caution: Stresses...