PIP SPTP10R027HA
100V N-Channel MOSFET
| Part No. | SPTP10R027HA |
|---|---|
| Datasheet | SPTP10R027HA Download |
| Manufacturer |  PIP |
| Description | 100V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
● Proprietary New Trench Technology● RDS(ON),typ.=2.3mΩ@VGS=10V
● Low Gate Charge Minimize Switching Loss
● Fast Recovery Body Diode BVDSS 100V RDS(ON),typ. 2.3mΩ ID 235A
APPLICATIONS
● Synchronous Rectification● DC/DC Converter
● Hard Switching and High Speed Circuit Ordering Information Part Number Package SPTP10R027HA TO-220 Brand GDS TO-220 Package No to Scale
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter SPTP10R027HA Unit VDSS VGSS ID IDM EAS PD TL TPAK Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current Continuous Drain Current @ Tc=100℃ Pulsed Drain Current at VGS=10V[2] Single Pulse Avalanche Energy L=1mH Power Dissipation Derating Factor above 25℃ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds 100 ±20 235 180 720 1300 278 2.22 300 260 V A mJ W W/℃ ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 150 Caution: Stresses greater than those listed in the “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device.
