• Part: SPTP12R15H
  • Description: 120V N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: PIP
  • Size: 1.03 MB
Download SPTP12R15H Datasheet PDF
PIP
SPTP12R15H
Features - Proprietary New Trench Technology - RDS(ON),typ.=10.8mΩ@VGS=10V - Low Gate Charge Minimize Switching Loss - Fast Recovery Body Diode BVDSS 120V RDS(ON),typ. 10.8mΩ ID 60A Applications - DC/DC Converter - Ideal for high-frequency switching and synchronous Ordering Information Part Number Package TO-220 Brand GD S TO-220 Package No to Scale Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Unit VDSS Drain-to-Source Voltage[1] VGSS Gate-to-Source Voltage ±20 Continuous Drain Current Continuous Drain Current @ Tc=100℃ Pulsed Drain Current at VGS=10V[2] Single Pulse Avalanche Energy L=1m H 200 dv/dt Peak Diode Recovery dv/dt Power...