PIP SPTP12R15H
120V N-Channel MOSFET
| Part No. | SPTP12R15H |
|---|---|
| Datasheet | SPTP12R15H Download |
| Manufacturer |  PIP |
| Description | 120V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL FEATURES
● Proprietary New Trench Technology● RDS(ON),typ.=10.8mΩ@VGS=10V
● Low Gate Charge Minimize Switching Loss
● Fast Recovery Body Diode BVDSS 120V RDS(ON),typ. 10.8mΩ ID 60A
APPLICATIONS
● DC/DC Converter● Ideal for high-frequency switching and synchronous Ordering Information Part Number Package SPTP12R15H TO-220 Brand GD S TO-220 Package No to Scale
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter SPTP12R15H Unit VDSS Drain-to-Source Voltage[1] 120 VGSS Gate-to-Source Voltage ±20 Continuous Drain Current 60 ID Continuous Drain Current @ Tc=100℃ 41 IDM Pulsed Drain Current at VGS=10V[2] 240 EAS Single Pulse Avalanche Energy L=1mH 200 dv/dt Peak Diode Recovery dv/dt 5.0 Power Dissipation 130 PD Derating Factor above 25℃ 1.05 TL TPAK Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds 300 260 V A mJ V/ns W W/℃ ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 150 Caution: Stresses greater than those listed in the “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device.
