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SPTP12R15H - 120V N-Channel MOSFET

Features

  • Proprietary New Trench Technology.
  • RDS(ON),typ. =10.8mΩ@VGS=10V.
  • Low Gate Charge Minimize Switching Loss.
  • Fast Recovery Body Diode BVDSS 120V RDS(ON),typ. 10.8mΩ ID 60A.

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Datasheet Details

Part number SPTP12R15H
Manufacturer PIP
File Size 1.03 MB
Description 120V N-Channel MOSFET
Datasheet download datasheet SPTP12R15H Datasheet
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SPTP12R15H 120V N-Channel MOSFET General Features  Proprietary New Trench Technology  RDS(ON),typ.=10.8mΩ@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body Diode BVDSS 120V RDS(ON),typ. 10.8mΩ ID 60A Applications  DC/DC Converter  Ideal for high-frequency switching and synchronous Ordering Information Part Number Package SPTP12R15H TO-220 Brand GD S TO-220 Package No to Scale Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter SPTP12R15H Unit VDSS Drain-to-Source Voltage[1] 120 VGSS Gate-to-Source Voltage ±20 Continuous Drain Current 60 ID Continuous Drain Current @ Tc=100℃ 41 IDM Pulsed Drain Current at VGS=10V[2] 240 EAS Single Pulse Avalanche Energy L=1mH 200 dv/dt Peak Diode Recovery dv/dt 5.
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