SPTP12R15H Description
SPTP12R15H 120V N-Channel MOSFET General.
SPTP12R15H Key Features
- Proprietary New Trench Technology
- RDS(ON),typ.=10.8mΩ@VGS=10V
- Low Gate Charge Minimize Switching Loss
- Fast Recovery Body Diode
- Part: SPTP12R15H
- Manufacturer: PIP
- Size: 1.03 MB
Related PIP Datasheets
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|---|---|
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