PIP SPTP15R7D5
150V N-Channel MOSFET
GENERAL FEATURES
● Proprietary New Trench Technology● RDS(ON),typ.=4.95mΩ@VGS=10V
● Low Gate Charge Minimize Switching Loss
● Fast Recovery Body Diode BVDSS 150V RDS(ON),typ. 4.95mΩ ID[2] 150A
APPLICATIONS
● DC/DC Converter● Motor Control
● Synchronous Rectification in SMPS Ordering Information Part Number Package SPTP15R7D5 TO-220 Brand GDS TO-220 Package Not to Scale
ABSOLUTE MAXIMUM RATINGS
TC=25℃ unless otherwise specified Symbol Parameter SPTP15R7D5 Unit VDSS VGSS ID IDM EAS dv/dt PD TL TPAK Drain-to-Source Voltage[1] Gate-to-Source Voltage Continuous Drain Current[2] Continuous Drain Current @ Tc=100℃[2] Pulsed Drain Current at VGS=10V[2,3] Single Pulse Avalanche Energy L=1mH Peak Diode Recovery dv/dt Power Dissipation Derating Factor above 25℃ Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds, Package Body for 10 seconds 150 ±20 150 100 560 1600 5.0 266 2.13 300 260 V A mJ V/ns W W/℃ ℃ TJ& TSTG Operating and Storage Temperature Range -55 to 150 Caution: Stresses greater than those listed in the “ABSOLUTE MAXIMUM RATINGS
” may cause permanent damage to the device.