PMS307416A Datasheet | PM Tech

πPM Tech 2048K Words x 16 Bits x 4 Banks (128-MBIT) Synchronous Dynamic RAM Features z Clock frequency: 166, 133 MHz z Fully synchronous; all signals referenced to a positive clock edge z Four banks operation z Single 3.3V power supply z LVTTL interface z Programmable burst length -- (1, 2, 4, 8, full page) z Programmable burst sequence: Sequential/Interleave z 4096 refresh cycles every 64 ms z Random column address every clock cycle z Programmable /CAS latency (2, 3 clocks) z Burst read/write and burst read/single write operations capability z Burst termination by burst stop and precharge mand z Byte controlled by LDQM and UDQM z Packages 400-mil 54-pin TSOP-II z Lead-free package Overview The PMS307416 is a high-speed CMOS synchronous DRAM containing 134,217,728 bits. It is organized as 4 Banks of 2048K Words x 16 Bits DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Ordering Information mercial Range: 0°C to 70°C Frequency Speed Part No. 166MHz 6ns PMS307416ATR-6CN 133MHz 7.5ns PMS307416ATR-75CN Package 400-Mil TSOP II Lead-free Pin Assignment VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 VDD LDQM /WE /CAS /RAS /CS BA0 BA1 A10/AP A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 VSS 53 DQ15 52 VSSQ 51 DQ14 50 DQ13 49 VDDQ 48 DQ12 47 DQ11 46 VSSQ 45 DQ10 44...