Datasheet Summary
Features
- Single Power Supply Operation
- 5.0 V ± 10% Read/Program/Erase
- High Performance Read
- 70/90 ns access time
- Memory Blocks Architecture
- One 16 Kbytes top or bottom Boot Block with software lockout
- Two 8 Kbytes Parameter Blocks
- One 96 Kbytes Main Block
- Three 128 Kbytes Main Blocks
- Automatic Block Erase and Byte Program
- Typical 12 µs/byte programming
- Typical 50 ms block or chip erase
- Hardware Data Protection
PRELIMINARY
4 Megabit (512K X 8) 5.0 Volt-only CMOS Flash Memory
- Data# Polling and Toggle Bit Features
- Low Power Consumption
- Typical 15 mA active read current
- Typical 40 mA program/erase current
- Typical 0.1 µA CMOS standby current
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