Datasheet Summary
Features
- Low Voltage Operation
- Dual read VCC ranges: 2.7 V to 3.6 V or 4.5 V to 5.5 V
- Program/Erase voltage: VCC
- 2.7 V to 3.6 V and VPP
- 11.5 V to 12.5 V
- High Performance Read
- 70 ns access time
- Electrical Chip Erase and Byte Program Using EPROM Programmer
- Maximum 20 µs/byte programming
- Maximum 100 ms chip erase
- Do not require UV erase
512 Kbit (64K X 8) Dual-Voltage Multiple-Cycle-Programmable ROM
- Low Power Consumption
- Typical 5 mA active read current
- Typical 18 µA CMOS standby current
- Excellent Product Reliablity
- Guarantee minimum 1,000 program/erase cycles
- Minimum 20 years data retention
- JEDEC Standard Byte-wide Flash Memory Pin-out
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