Datasheet Summary
P3M171K2K3 SiC MOS N-Channel Enhancement Mode
VRRM
= 1700 V
=6
ID (100℃) = 4
RDS(on)
=1
Ω
SiC MOS P3M171K2K3 N-Channel Enhancement Mode
Features
- High Blocking Voltage with Low On-Resistance
- High-Frequency Operation
- Ultra-Small Qgd
- 100% UIS tested
3 2 1
Benefits
- Improve System Efficiency
- Increase Power Density
- Reduce Heat Sink Requirements
- Reduction of System Cost
Applications
- Solar Inverters
- EV Battery Chargers
- High Voltage DC/DC Converters
- Switch Mode Power Supplies
TO-247-3
Gate
Drain
Source
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