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P3M171K2K3 - N-Channel Enhancement Mode SiC MOS

Features

  • High Blocking Voltage with Low On-Resistance.
  • High-Frequency Operation.
  • Ultra-Small Qgd.
  • 100% UIS tested 3 2 1 D Benefits.
  • Improve System Efficiency.
  • Increase Power Density.
  • Reduce Heat Sink Requirements.
  • Reduction of System Cost.

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Datasheet preview – P3M171K2K3

Datasheet Details

Part number P3M171K2K3
Manufacturer PN Junction Semiconductor
File Size 1.17 MB
Description N-Channel Enhancement Mode SiC MOS
Datasheet download datasheet P3M171K2K3 Datasheet
Additional preview pages of the P3M171K2K3 datasheet.

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    P3M171K2K3 SiC MOS N-Channel Enhancement Mode VRRM = 1700 V ID =6 A ID (100℃) = 4 A RDS(on) =1 Ω SiC MOS P3M171K2K3 N-Channel Enhancement Mode Features  High Blocking Voltage with Low On-Resistance  High-Frequency Operation  Ultra-Small Qgd  100% UIS tested 3 2 1 D Benefits  Improve System Efficiency  Increase Power Density  Reduce Heat Sink Requirements  Reduction of System Cost Applications  Solar Inverters  EV Battery Chargers  High Voltage DC/DC Converters  Switch Mode Power Supplies TO-247-3 Gate 1 Drain 2 Source 3 Order Information Part Number P3M171K2K3 Package TO-247-3 Marking P3M171K2K3 www.pnjsemi.com Page 1 of 12 Ver. 1.0 Jan. 2022 P3M171K2K3 SiC MOS N-Channel Enhancement Mode Contents Features .............................................
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