P3M171K2K3 Overview
P3M171K2K3 SiC MOS N-Channel Enhancement Mode VRRM = 1700 V ID =6 A ID (100℃) = 4 A RDS(on) =1 Ω SiC MOS P3M171K2K3 N-Channel Enhancement.
P3M171K2K3 Key Features
- High Blocking Voltage with Low On-Resistance
- High-Frequency Operation
- Ultra-Small Qgd
- 100% UIS tested
- Improve System Efficiency
- Increase Power Density
- Reduce Heat Sink Requirements
- Reduction of System Cost