P3M171K2K3 - N-Channel Enhancement Mode SiC MOS

Key Features

High Blocking Voltage with Low On-Resistance.
High-Frequency Operation.
Ultra-Small Qgd.
100% UIS tested 3 2 1 D Benefits.
Improve System Efficiency.
Increase Power Density.
Reduce Heat Sink Requirements.
Reduction of System Cost.

P3M171K2K3 n-channel enhancement mode sic mos by PN Junction Semiconductor - Datasheet Preview

Datasheet Details

Part number	P3M171K2K3
Manufacturer	PN Junction Semiconductor
File Size	1.17 MB
Description	N-Channel Enhancement Mode SiC MOS
Datasheet	P3M171K2K3 Datasheet

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P3M171K2K3 SiC MOS N-Channel Enhancement Mode VRRM = 1700 V ID =6 A ID (100℃) = 4 A RDS(on) =1 Ω SiC MOS P3M171K2K3 N-Channel Enhancement Mode Features  High Blocking Voltage with Low On-Resistance  High-Frequency Operation  Ultra-Small Qgd  100% UIS tested 3 2 1 D Benefits  Improve System Efficiency  Increase Power Density  Reduce Heat Sink Requirements  Reduction of System Cost Applications  Solar Inverters  EV Battery Chargers  High Voltage DC/DC Converters  Switch Mode Power Supplies TO-247-3 Gate 1 Drain 2 Source 3 Order Information Part Number P3M171K2K3 Package TO-247-3 Marking P3M171K2K3 www.pnjsemi.com Page 1 of 12 Ver. 1.0 Jan. 2022 P3M171K2K3 SiC MOS N-Channel Enhancement Mode Contents Features .............................................