• Part: PESDR0521P1A
  • Description: 1-Line Ultra Low Capacitance Bi-directional TVS Diode
  • Category: Diode
  • Manufacturer: PN-Silicon
  • Size: 308.83 KB
Download PESDR0521P1A Datasheet PDF
PN-Silicon
PESDR0521P1A
PESDR0521P1A is 1-Line Ultra Low Capacitance Bi-directional TVS Diode manufactured by PN-Silicon.
- Part of the PESDR0521P1A-PN comparator family.
Description The PESDR0521P1A is a bi-directional TVS diode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive high--speed data lines. The PESDR0521P1A has an ultra-low capacitance with a typical value at 0.3p F, and plies with the IEC 6100 0-4-2 (ESD) standard with ±15k V air and ±8Kv contact discharge. It is assembled into an ultra-small 1.0x0.6x 0.5mm lead-free DFN package. The small size, ultra-low capacitance and high ESD surge protection make PESDR0521P1A an ideal choice to protect cellphone, digital video interfaces and other high speed ports. Features - Ultra small package: 1.0x0.6x0.5mm - Ultra low capacitance: 0.26p F typical - Ultra low leakage: n A level - Low operating voltage: 5 V - Low clamping voltage - 2-pin leadless package - plies with following...