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GX3441 - RF POWER GAN TRANSISTOR

Description

Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications.

The use of a thermally enhanced package enables this device to have superior heat dissipation properties.

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Datasheet Details

Part number GX3441
Manufacturer POLYFET RF DEVICES
File Size 50.49 KB
Description RF POWER GAN TRANSISTOR
Datasheet download datasheet GX3441 Datasheet

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polyfet rf devices GX3441 General Description Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation properties. The high drain break down voltage permits this device to operate over a wide voltage range. RF POWER GAN TRANSISTOR 80.0 Watts Single Ended Package Style GX HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT Suitable for use across 1-3000Mhz ABSOLUTE MAXIMUM RATINGS ( T = 25 oC ) Total Device Dissipation 95 Watts Junction to Case Thermal Resistance o 3.
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