PSD36TN Overview
Symbol Test Conditions IR VR = VRRM Tvj = 25˚C VR = VRRM Tvj = Tvjm VF IF = 150 A Tvj = 25˚C VTO For power-loss calculations only rT Tvj = Tvjm Rth(j-c) per diode; DC current per module Rth(j-s) per diode;.
PSD36TN Key Features
- ¼” gold- or nickel-plated FASTON
- Isolation voltage 3000 V~
- Mesa glass-passivated chips
- Blocking voltage up to 2200 V
- Low forward voltage drop
- UL registered E 148688
PSD36TN Applications
- Supplies for DC power equipment
- Input rectifiers for PWM inverters
