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PSIPM35-12 - Converter - Brake - Inverter Module

Features

  • Package with DCB ceramic base plate.
  • High level of integration - only one power semiconductor module required for the whole drive.
  • Planar glass passivated chips.
  • NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness.
  • Epitaxial free wheeling diodes with hiperfast and soft reverse recovery.
  • Temperature sense included.
  • Leads suitable for PC board RthJC per d.

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Datasheet preview – PSIPM35-12

Datasheet Details

Part number PSIPM35-12
Manufacturer POWERSEM
File Size 719.43 KB
Description Converter - Brake - Inverter Module
Datasheet download datasheet PSIPM35-12 Datasheet
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Full PDF Text Transcription

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Converter - Brake - Inverter Module PSIPM 35/12 Preliminary Data Sheet A15 A10 C1 V15 U15 H15 D15 A5 F15 L15 J15 L1 F1 N1 H1 U1 V1 N15 Q15 O15 P1 S15 V11 V13 R1 V4 V7 sheet Three Phase Rectifier VRRM ata er IFAVM IFSM = 1600 V = 68 A = 300 A Brake Chopper VCES = IC25 = VCE(sat) = 1200 V 30 A 2.6 V Three Phase Inverter VCES = IC25 = VCE(sat) = 1200 V 49 A 3.1 V tentative dstill und Input Rectifiers t Symbol uct en I* dAV I FSM m V RRM Test Conditions TC = 100 °C, (per circuit) TVJ = 25°C; t = 10 ms; sin 50 Hz Maximum Ratings 68 A 300 A 1600 V prod evelop Symbol IR V d F V TO r T Test Conditions Characteristic Value VR = VRRM, TVJ = TVJM ≤ VR = VRRM, TVJ = 25°C ≤ IF = 55 A, TVJ = 25 °C ≤ For power-loss calculations only 3 mA 0.5 mA 1.
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