Overview: IGBT Module
Preliminary Data Sheet OP 9 L9 E2 X13 GH 10 NTC K10 X15 X16 VX 18 PSI 100/06* PSIG 100/06 PSI 100/06* PSIS 100/06* PSSI 100/06* AC 1 L9 T16
X15 NTC IK 10 X16 PSIS 100/06* ECO-PACTM 2 IC25 = 93 A VCES = 600 V V = CE(sat)typ. 2.4 V X15 NTC
X16 L9 F1 IK 10
AC 1
PSSI 100/06* IGBTs
Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Conditions Maximum Ratings TVJ = 25°C to 150°C 600 V ± 20 V TC = 25°C TC = 80°C 93 A 63 A VGE = ±15 V; RG = 15 Ω; TVJ = 125°C 150 A RBSOA, Clamped inductive load; L = 100 µH VCES VCE = VCES; VGE = ±15 V; RG = 15 Ω; TVJ = 125°C non-repetitive 10 µs TC = 25°C 294 W Symbol
VCE(sat)
VGE(th) ICES
IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max. IC = 100 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1.5 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 300 V; IC = 60 A VGE = 15/0 V; RG = 15 Ω 2.4 2.8 V 2.8 V 4.5 6.5 V 1.4 mA 6.5 mA 150 nA 150 ns 60 ns 450 ns 40 ns 3.2 mJ 2.2 mJ VCE = 25 V; VGE = 0 V; f = 1 MHz
(per IGBT) with heatsink pound (0.42 K/m.K; 50 µm) 4.2 nF 0.43 K/W 0.
