A158S - Asymmetric thyristors

Key Features

. All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 2000 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device.

A158S asymmetric thyristors by PST - Datasheet Preview

Datasheet Details

Part number	A158S
Manufacturer	PST
File Size	167.53 KB
Description	Asymmetric thyristors
Datasheet	A158S Datasheet

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YANGZHOU POSITIONING TECH. CO., LTD Asymmetric thyristors A158 S Features: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 2000 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State VRRM (1) VDRM (1) VRSM (1) 15 1000 15 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse IRRM / IDRM leakage and off state leakage Critical rate of voltage rise (4) dV/dt 5 mA 40 mA (3) 1000 V/µsec Conducting - on state Notes: All ratings are specified for Tj=25 oC unless otherwise stated.