ATA644S28 - Asymmetric thyristors

Key Features

. All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 2100 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device.

ATA644S28 asymmetric thyristors by PST - Datasheet Preview

Datasheet Details

Part number	ATA644S28
Manufacturer	PST
File Size	173.90 KB
Description	Asymmetric thyristors
Datasheet	ATA644S28 Datasheet

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YANGZHOU POSITIONING TECH. CO., LTD PSTATA644S28 Asymmetric thyristors Features: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 2100 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device ELECTRICAL CHARACTERISTICS AND RATINGS Blocking - Off State VRRM (1) VDRM (1) VRSM (1) 20 2800 2100 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state lCeraitkicaaglerate of voltage rise IRRM IDRM dV/dt (4) 1000 mA 200 mA (3) 500 V/sec Conducting - on state Notes: All ratings are specified for Tj=25 oC unless otherwise stated.