PST C648
HIGH POWER THYRISTOR
APPLICATIONS
FEATURES
: . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Blocking capabilty up to 1400 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled DeviceELECTRICAL CHARACTERISTICS
AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) C648E 500 500 600 C648M 600 600 720 C648N 800 800 960 C648P 1000 1000 1150 C648PB 1200 1200 1300 C648PD 1400 1400 1500 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise (4) IRRM / IDRM dV/dt 15 mA 35 mA (3) 500 V/sec Notes: All ratings