PST PSTC458
HIGH POWER THYRISTOR
APPLICATIONS
FEATURES
: . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Blocking capabilty up to 1400 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled DeviceELECTRICAL CHARACTERISTICS
AND RATINGS Blocking - Off State Device Type PSTC458E PSTC458M PSTC458N PSTC458P PSTC458PB PSTC458PD VRRM (1) 500 600 800 1000 1200 1400 VDRM (1) 500 600 800 1000 1200 1400 VRSM (1) 600 720 960 1150 1300 1500 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM dV/dt (4) 15 mA 65 mA (3) 500 V/µsec Conductin