PST PSTC760
HIGH POWER THYRISTOR
APPLICATIONS
CASE 6TFEATURES
: . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Blocking capabilty up to 1600 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled DeviceELECTRICAL CHARACTERISTICS
AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) PSTC760M PSTC760N PSTC760P PSTC760PB PSTC760PD PSTC760PM 600 800 1000 1200 1400 1600 600 800 1000 1200 1400 1600 700 900 1100 1300 1500 1700 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM dV/dt (4) 20 mA 90 mA (3) 500 V/µsec C