PST PSTC771
HIGH POWER THYRISTOR
APPLICATIONS
CASE 6TFEATURES
: . All Diffused Structure . Involute Amplifying Gate Configuration . Blocking capabilty up to 2500 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled DeviceELECTRICAL CHARACTERISTICS
AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) PSTC771LB 2200 2200 2300 PSTC771LE 2500 2500 2600 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM dV/dt (4) 20 mA 100 mA (3) 500 V/µsec Conducting - on state Parameter Average value of on-state current RMS value of on-state current Pea