PST PSTC784
HIGH POWER THYRISTOR
APPLICATIONS
CASE 5TFEATURES
: . All Diffused Structure . Spoke Amplifying Gate Configuration . Blocking capabilty up to 4400 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled DeviceELECTRICAL CHARACTERISTICS
AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) PSTC784CM PSTC784CN PSTC784DP PSTC784DB PSTC784DC PSTC454DD 3600 3800 4000 4200 4300 4400 3600 3800 4000 4200 4300 4400 3700 3900 4100 4300 4400 4500 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM dV/dt (4) 20 mA 250 mA (3) 1000 V/µsec C