PST PSTC881
HIGH POWER THYRISTOR
APPLICATIONS
CASE 7TFEATURES
: . All Diffused Structure . Involute Amplifying Gate Configuration . Blocking capabilty up to 2800 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled DeviceELECTRICAL CHARACTERISTICS
AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) PSTC881L 2000 2000 2100 PSTC881LB 2200 2200 2300 PSTC881LD 2400 2400 2500 PSTC881LM 2600 2600 2700 PSTC881LN 2800 2800 2900 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM dV/dt (4) 20 mA 100 mA (3) 500 V/µsec Conducting - on stat