. All Diffused Structure . Interdigitated Amplifying Gate Configuration . Blocking capabilty up to 2100 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Technical Data :
Page 1 of 3
R1275NS21H
- Power Thyristor
2100 VDRM;
**********************************************************************************************************
HIGH POWER THYRISTOR FOR INVERTER AND CHOPPER APPLICATIONS
Features:
. All Diffused Structure . Interdigitated Amplifying Gate Configuration . Blocking capabilty up to 2100 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability .