R200CH20FJO
R200CH20FJO is HIGH POWER THYRISTOR manufactured by PST.
Features
:
. All Diffused Structure . Interdigitated Amplifying Gate Configuration . Blocking capabilty up to 2000 volts . Guaranteed Maximum Turn-Off Time . High d V/dt Capability . Pressure Assembled Device
ELECTRICAL CHARACTERISTICS AND RATINGS
Blocking
- Off State
Device Type VRRM (1) VDRM (1) VRSM (1)
R200CH20FJO 2000
VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2)
Repetitive peak reverse leakage and off state leakage
Critical rate of voltage rise (4)
IRRM / IDRM d V/dt
15 m A 50 m A (3)
500 V/µsec
Conducting
- on state
Notes: All ratings are specified for Tj=25 o C unless otherwise stated. (1) All voltage ratings are specified for an applied
50Hz/60z Hz sinusoidal waveform over the...
