PST R200CH20FJO
HIGH POWER THYRISTOR
| Part No. | R200CH20FJO |
|---|---|
| Datasheet | R200CH20FJO Download |
| Manufacturer | PST |
| Description | HIGH POWER THYRISTOR |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
: . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Blocking capabilty up to 2000 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled DeviceELECTRICAL CHARACTERISTICS
AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) R200CH20FJO 2000 2000 2100 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise (4) IRRM / IDRM dV/dt 15 mA 50 mA (3) 500 V/µsec Conducting - on state Notes: All ratings are specified for Tj=25 oC unless otherwise stated. (1) All voltage ratings are specified for an applied 50Hz/60zHz sinusoidal waveform over the temp
