PST R325CH
HIGH POWER THYRISTOR
APPLICATIONS
FEATURES
: . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Blocking capabilty up to 1400 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled DeviceELECTRICAL CHARACTERISTICS
AND RATINGS Blocking - Off State Device Type VRRM (1) VDRM (1) VRSM (1) R325CH05 R325CH06 R325CH08 R325CH10 R325CH12 500 600 800 1000 1200 500 600 800 1000 1200 600 720 960 1150 1300 R325CH14 1400 1400 1500 VRRM = Repetitive peak reverse voltage VDRM = Repetitive peak off state voltage VRSM = Non repetitive peak reverse voltage (2) Repetitive peak reverse leakage and off state leakage Critical rate of voltage rise IRRM / IDRM dV/dt (4) 15 mA 65 mA (3) 500 V/µsec Conducti