SI2333 - P-ChannelEnhancement Mode Power MOSFET

Key Features

VDS = -12V,ID = -6A RDS(ON) < 45mΩ @ VGS=-2.5V RDS(ON) < 30mΩ @ VGS=-4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package.

SI2333 p-channelenhancement mode power mosfet by PUOLOP - Datasheet Preview

Datasheet Details

Part number	SI2333
Manufacturer	PUOLOP
File Size	464.74 KB
Description	P-ChannelEnhancement Mode Power MOSFET
Datasheet	SI2333 Datasheet

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SI2333 P-ChannelEnhancement Mode Power MOSFET General Features ● VDS = -12V,ID = -6A RDS(ON) < 45mΩ @ VGS=-2.5V RDS(ON) < 30mΩ @ VGS=-4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM applications ● Load switch ● Power management D SOT-23-3L GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimete Min. 1.90 1.00 0.10 0.40 0.85 Max. REF. 1.30 0.20 1.