FEATURES
Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Byte Write Cycle Time - 10 ms Maximum Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current Fast Write Cycle Time - DATA Polling CMOS & TTL Compatible Inputs and Outputs PYA28C16B 2K X 8 EEPROM Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional) Data Retention: 10 Years Available in the following package: – 24-Pin 600 mil Ceramic DIP – 32-Pin Ceramic LCC (450x550 mils) DESCRIPTION
The PYA28C16B is a 5 Volt 2Kx8 EEPROM. Data Retention is 10 Years. PIN CONFIGURATIONS FUNCTIONAL BLOCK DIAGRAM DIP (C12) Document # EEPROM109 REV OR LCC (L6) Revised October 2012 PYA28C16B - 2K x 8 EEPROM OPERATION READ Read operations are initiated by both OE and CE LOW. The read operation is terminated by either CE or OE returning HIGH. This two line control architecture eliminates bus contention in a system environment. The data bus will be in a high impedance state when either OE or CE is HIGH. BYTE WRITE Write operations are initiated when both CE and WE are LOW and OE is HIGH.
PYRAMID
