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PYA28C64B - STATIC CMOS RAM

General Description

The PYA28C64B is a 5 Volt 8Kx8 EEPROM.

The device supports 64-byte page write operation.

Key Features

  • Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 40 mA Active Current - 100 µA Standby Current Fast Write Cycle Times PYA28C64B 8K x 8 EEPROM Software Data Protection CMOS & TTL Compatible Inputs and Outputs Endurance: - 100,000 Write Cycles Data Retention: 10 Years Available in the following packages:.
  • 28-Pin 600 mil Ceramic DIP.
  • 32-Pin Ceramic LCC (450x550 mils).

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Datasheet Details

Part number PYA28C64B
Manufacturer PYRAMID
File Size 570.31 KB
Description STATIC CMOS RAM
Datasheet download datasheet PYA28C64B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FEATURES Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 40 mA Active Current - 100 µA Standby Current Fast Write Cycle Times PYA28C64B 8K x 8 EEPROM Software Data Protection CMOS & TTL Compatible Inputs and Outputs Endurance: - 100,000 Write Cycles Data Retention: 10 Years Available in the following packages: – 28-Pin 600 mil Ceramic DIP – 32-Pin Ceramic LCC (450x550 mils) DESCRIPTION The PYA28C64B is a 5 Volt 8Kx8 EEPROM. The device supports 64-byte page write operation. The PYA28C64B features DATA and Toggle Bit Polling to indicate early completion of a Write Cycle. The device also includes user-optional software data protection. Data Retention is 10 Years.