FEATURES
Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 40 mA Active Current - 100 µA Standby Current Fast Write Cycle Times PYA28C64B 8K x 8 EEPROM Software Data Protection CMOS & TTL Compatible Inputs and Outputs Endurance: - 100,000 Write Cycles Data Retention: 10 Years Available in the following packages: – 28-Pin 600 mil Ceramic DIP – 32-Pin Ceramic LCC (450x550 mils) DESCRIPTION
The PYA28C64B is a 5 Volt 8Kx8 EEPROM. The device supports 64-byte page write operation. The device also includes user-optional software data protection. Data Retention is 10 Years. The device is available in a 28-Pin 600 mil wide Ceramic DIP and 32-Pin LCC. Functional Block Diagram Pin Configuration Document # EEPROM111 REV 02 DIP (C5-1) LCC (L6) Modified April 2015 PYA28C64B - 8K x 8 EEPROM OPERATION READ Read operations are initiated by both OE and CE LOW. The read operation is terminated by either CE or OE returning HIGH. This two line control architecture eliminates bus contention in a system environment.
PYRAMID
