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PYA28HC256 - STATIC CMOS RAM

Datasheet Summary

Description

The PYA28HC256 is a 5 Volt 32Kx8 EEPROM.

The device supports 64-byte page write operation.

Features

  • Access Times of 70, 90 and 120ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 80 mA Active Current - 3 mA Standby Current Fast Write Cycle Times PYA28HC256 HIGH SPEED 32K x 8 EEPROM Software Data Protection CMOS & TTL Compatible Inputs and Outputs Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional) Data Retention: 10 Years Available in the following package:.
  • 28-Pin 600 mil Ceramic DIP.
  • 32-Pin Ceramic LCC.

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Datasheet preview – PYA28HC256

Datasheet Details

Part number PYA28HC256
Manufacturer PYRAMID
File Size 638.20 KB
Description STATIC CMOS RAM
Datasheet download datasheet PYA28HC256 Datasheet
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FEATURES Access Times of 70, 90 and 120ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 80 mA Active Current - 3 mA Standby Current Fast Write Cycle Times PYA28HC256 HIGH SPEED 32K x 8 EEPROM Software Data Protection CMOS & TTL Compatible Inputs and Outputs Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional) Data Retention: 10 Years Available in the following package: – 28-Pin 600 mil Ceramic DIP – 32-Pin Ceramic LCC (450x550 mils) DESCRIPTION The PYA28HC256 is a 5 Volt 32Kx8 EEPROM. The device supports 64-byte page write operation. The PYA28HC256 features DATA and Toggle Bit Polling as well as a system software scheme used to indicate early completion of a Write Cycle.
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