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PYX28HC64 - STATIC CMOS RAM

General Description

The PYX28HC64 is a 5 Volt 8Kx8 EEPROM using floating gate CMOS Technology.

The device supports 64-byte page write operation.

Key Features

  • Access Times of 70, 90, and 120ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 40 mA Active Current - 200 µA Standby Current Fast Write Cycle Times PYX28HC64 8K x 8 EEPROM Software Data Protection Fully TTL Compatible Inputs and Outputs Endurance: 100,000 Cycles Data Retention: 100 Years Available in the following packages:.
  • 32-Pin Ceramic LCC (450 x 550 mils).
  • 28-Pin 600 mil Ceramic DIP.

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Datasheet Details

Part number PYX28HC64
Manufacturer PYRAMID
File Size 573.43 KB
Description STATIC CMOS RAM
Datasheet download datasheet PYX28HC64 Datasheet

Full PDF Text Transcription for PYX28HC64 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PYX28HC64. For precise diagrams, and layout, please refer to the original PDF.

FEATURES Access Times of 70, 90, and 120ns Single 5V±10% Power Supply Simple Byte and Page Write Low Power CMOS: - 40 mA Active Current - 200 µA Standby Current Fast Writ...

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Power CMOS: - 40 mA Active Current - 200 µA Standby Current Fast Write Cycle Times PYX28HC64 8K x 8 EEPROM Software Data Protection Fully TTL Compatible Inputs and Outputs Endurance: 100,000 Cycles Data Retention: 100 Years Available in the following packages: – 32-Pin Ceramic LCC (450 x 550 mils) – 28-Pin 600 mil Ceramic DIP DESCRIPTION The PYX28HC64 is a 5 Volt 8Kx8 EEPROM using floating gate CMOS Technology. The device supports 64-byte page write operation. The PYX28HC64 features DATA and Toggle Bit Polling as well as a system software scheme used to indicate early completion of a Write Cycle. The device also includes

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