Datasheet Summary
PJD06N03
25V N-Channel Enhancement Mode MOSFET
TO-252
Features
- RDS(ON), VGS@10V,IDS@30A=6mΩ
- RDS(ON), VGS@4.5V,IDS@30A=9mΩ
- Advanced trench process technology
- High Density Cell Design For Uitra Low On-Resistance
- Specially Designed for DC/DC Converters and Motor Drivers ..
- Fully Characterized Avalanche Voltage and Current
- Pb free product : 99% Sn above can meet RoHS environment substance directive request
MECHANICALDATA
- Case: TO-252 Molded Plastic
- Terminals : Solderable per MIL-STD-750,Method 2026
- Marking : 06N03
Drain
Gate
Source
Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted )
PA RA M E TE R D r a i n- S o ur c e Vo l t...
