F8N60 Datasheet | PanJit Semiconductor

PJP8N60 / PJF8N60 600V N-Channel Enhancement Mode MOSFET Features - 8A , 600V, R DS(ON)=1.2Ω@VGS=10V, ID=4.0A - - - - - - Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In pliance with EU Ro Hs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 2 G 3 D 2 G 3 S D MECHANICAL DATA - Case: TO-220AB / ITO-220AB Molded Plastic - Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM Drain ORDERING INFORMATION TYPE PJP8N60 PJF8N60 MARKING P8N60 PACKAGE TO-220AB ITO-220AB PACKING Gate...