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PJA3476 - N-Channel Enhancement Mode MOSFET

Key Features

  • RDS(ON) , VGS@10V, ID@300mA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PPJA3476 100V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 100 V Current 300mA SOT-23 Features  RDS(ON) , VGS@10V, ID@300mA<6Ω  RDS(ON) , VGS@4.5V, ID@200mA<9Ω  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc  Lead free in compliance with EU RoHS 2011/65/EU directive.  ESD Protected 2KV HBM  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: SOT-23 Package  Terminals : Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0003 ounces, 0.