PJD15N06L Overview
PJD15N06L 60V N-Channel Enhancement Mode MOSFET TO-252.
PJD15N06L Key Features
- RDS(ON), VGS@10V,IDS@10A=40mΩ
- RDS(ON), VGS@4.5V,IDS@8.0A=50mΩ
- Advanced Trench Process Technology
- High Density Cell Design For Ultra Low On-Resistance
- Specially Designed for DC/DC Converters
- Fully Characterized Avalanche Voltage and Current
- Pb free product : 99% Sn above can meet RoHS environment substance directive request
- Case: TO-252 Molded Plastic
- Terminals : Solderable per MIL-STD-750D,Method 1036.3
- Marking : 15N06L