PJD15N06L Datasheet | PanJit Semiconductor

.. 60V N-Channel Enhancement Mode MOSFET TO-252 Features - RDS(ON), VGS@10V,IDS@10A=40mΩ - RDS(ON), VGS@4.5V,IDS@8.0A=50mΩ - Advanced Trench Process Technology - High Density Cell Design For Ultra Low On-Resistance - Specially Designed for DC/DC Converters - Fully Characterized Avalanche Voltage and Current - Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA - Case: TO-252 Molded Plastic - Terminals : Solderable per MIL-STD-750D,Method 1036.3 - Marking : 15N06L Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G...