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PJD15N06L - N-Channel Enhancement Mode MOSFET

Key Features

  • RDS(ON), VGS@10V,IDS@10A=40mΩ.
  • RDS(ON), VGS@4.5V,IDS@8.0A=50mΩ.
  • Advanced Trench Process Technology.
  • High Density Cell Design For Ultra Low On-Resistance.
  • Specially Designed for DC/DC Converters.
  • Fully Characterized Avalanche Voltage and Current.
  • Pb free product : 99% Sn above can meet RoHS environment substance directive request.

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www.DataSheet4U.com PJD15N06L 60V N-Channel Enhancement Mode MOSFET TO-252 FEATURES • RDS(ON), VGS@10V,IDS@10A=40mΩ • RDS(ON), VGS@4.5V,IDS@8.0A=50mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for DC/DC Converters • Fully Characterized Avalanche Voltage and Current • Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA • Case: TO-252 Molded Plastic • Terminals : Solderable per MIL-STD-750D,Method 1036.