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PJSD03LCFN2 - BI-DIRECTIONAL ESD PROTECTION DIODE

Key Features

  • 40W Power Dissipation (8/20μs Waveform).
  • Low Leakage Current, Maximum of 2.5μA@3.3Vdc.
  • Very low Clamping voltage.
  • IEC 61000-4-2 ESD 30kV air, 30kV Contact Compliance.
  • In compliance with EU RoHS 2002/95/EC directives.
  • Terminals : Solderable per MIL-STD-750, Method 2026.
  • Case : DFN 2L, Plastic.
  • Marking : BS 0.022(0.55) 0.017(0.45) 0.002(0.05)MAX. 0.042(1.05) 0.037(0.95).

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Full PDF Text Transcription (Reference)

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PJSD03LCFN2 BI-DIRECTIONAL ESD PROTECTION DIODE This bi-directional TVS has been designed to protect sensitive equipment against ESD and to prevent Latch-Up events in CMOS circuitry operating at 3.3Vdc and below.This offers an integrated solution to protect a single data line where the board space is a premium. SPECIFICATION FEATURES • 40W Power Dissipation (8/20μs Waveform) • Low Leakage Current, Maximum of 2.5μA@3.3Vdc • Very low Clamping voltage • IEC 61000-4-2 ESD 30kV air, 30kV Contact Compliance • In compliance with EU RoHS 2002/95/EC directives • Terminals : Solderable per MIL-STD-750, Method 2026 • Case : DFN 2L, Plastic • Marking : BS 0.022(0.55) 0.017(0.45) 0.002(0.05)MAX. 0.042(1.05) 0.037(0.